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DUBLIN, Aug. 15, 2023 /PRNewswire/ — The “RF Gallium Nitride Market by Device, Wafer Size, End-user, and Region – Global Forecast to 2028” report has been added to ResearchAndMarkets.com’s offering.
The global RF gallium nitride (GaN) market was valued at USD 1.3 billion in 2022 and is anticipated to reach USD 2.8 billion by 2028, with a CAGR of 12.9% during the forecast period. Several factors are driving this growth, including the advantages of GaN over traditional silicon (SI), increased demand from consumers, enterprises, and the automotive sector for power electronics devices, continuous technological advancements in the GaN ecosystem, suitability of GaN for RF applications, and growing adoption of GaN RF semiconductor devices in military, defense, and aerospace applications. However, competition from alternatives like Silicon Carbide (SiC) for high-voltage semiconductor applications is limiting the growth of the RF GaN market.
Integrated RF Device Segment
The Integrated RF device segment is expected to exhibit a higher CAGR during the forecast period. Integrated RF devices based on GaN have revolutionized RF and microwave electronics, providing benefits like improved power density, efficiency, and linearity. They are used across industries such as wireless communications, radar systems, satellite communications, and defense. These integrated devices are smaller and lighter as they combine gate drivers, protection circuitry, and auxiliary functions, reducing the need for separate components. The demand for RF GaN integrated devices is projected to rise significantly due to these advantages.
200 and Above Wafer Size Segment
The 200 and above wafer size segment is anticipated to experience higher growth during the forecast period. Larger wafer sizes, such as 200 mm and above, offer faster and more efficient processing compared to smaller sizes. This results in higher yields and cost savings. Moreover, larger wafers can accommodate bigger devices with higher current ratings, making them ideal for the production of high-power RF GaN devices. This trend is expected to drive growth in this segment.
Satellite Communication Segment
The satellite communication segment is likely to exhibit the highest CAGR during the forecast period. RF GaN technology is scalable and adaptable to future satellite communication systems. It supports emerging standards such as higher-frequency bands for increased data rates and system capacities. The versatility of RF GaN devices allows for easy adaptation to new communication protocols and technologies, ensuring long-term compatibility and future-proofing of satellite networks.
North America Region
North America is projected to witness the highest CAGR during the forecast period. Government initiatives in the region are promoting the growth of the RF GaN market. For example, funding by US Senator Patrick Leahy and GlobalFoundries aims to advance the development and production of next-generation GaN. Such initiatives are increasing the demand for RF GaN devices in North America.
Research Coverage
The report segments the RF GaN market by device type, wafer size, end-use, and region. It analyzes the drivers, restraints, opportunities, and challenges in the market. The report covers North America, Europe, Asia Pacific, and RoW regions. It includes a supply chain analysis, competitive analysis of key players, and their profiles, recent developments, and market strategies. Key players in the RF GaN market include Sumitomo Electric Device Innovations, Qorvo, WOLFSPEED, NXP Semiconductors, and MACOM.
Conclusion
The global RF GaN market is poised for substantial growth due to advantages over traditional SI, increased demand from various sectors, technological advancements, and the suitability of GaN for RF applications. The integrated RF device segment, larger wafer sizes, and satellite communication applications are expected to drive this growth. Government initiatives and funding in regions like North America further contribute to market expansion. The RF GaN market presents significant opportunities for key players to innovate and capture the growing demand for advanced RF semiconductor devices.
Market Dynamics
- Drivers
- Various Advantages of Gallium Nitride Over Traditional Silicon
- Increased Demand from Consumers, Enterprises, and Automotive Vertical for Power Electronic Devices
- Effective Development of Technologies in Gallium Nitride Ecosystem
- Suitability of Gallium Nitride in RF Applications
- Increased Adoption of Gallium Nitride RF Semiconductor Devices in Military, Defense, and Aerospace Applications
- Restraints
- Higher Efficacy of Alternatives Such as Silicon Carbide for High-Voltage Semiconductor Applications
- Opportunities
- Evolving Renewable Energy Applications of Gallium Nitride
- Applications of Gallium Nitride in Electric and Hybrid Electric Vehicles
- Potential Use of Gallium Nitride in 6G Infrastructure Development
- Consolidating Trend of Smart Manufacturing
- Challenges
- High Material and Fabrication Costs
- Complexities Associated with Designing Electrical Layout of Gallium Nitride Devices
Premium Insights
- Growing Adoption of 5G to Drive RF Gallium Nitride Market Growth
- Integrated RF Devices Segment to Record Higher CAGR in RF Gallium Nitride Market During Forecast Period
- Market in Asia-Pacific for Telecom Infrastructure Segment to Hold Largest Share During Forecast Period
- Satellite Communications to Register Highest CAGR in RF Gallium Nitride Market in Asia-Pacific from 2023 to 2028
- Asia-Pacific to Hold Largest Share of RF Gallium Nitride Market, in Terms of Value, in 2028
- China to Record Highest CAGR in RF Gallium Nitride Market During Forecast Period
Other Key Insights
- Value Chain Analysis
- RF Gallium Nitride Market Ecosystem
- Average Selling Price Analysis
- Key Stakeholders and Buying Criteria
- Porter’s Five Forces Analysis
- Case Studies
- Technology Analysis
- Trade Analysis
- Patent Analysis
- Key Conferences and Events, 2023-2024
- Standards and Regulatory Landscape
- Tariff Analysis
Key Topics Covered
1 Introduction
2 Research Methodology
3 Executive Summary
4 Premium Insights
5 Market Overview
6 RF Gallium Nitride Market, by Device Type
7 RF Gallium Nitride Market, by Wafer Size
8 RF Gallium Nitride Market, by End-user
9 RF Gallium Nitride Market, by Region
10 Competitive Landscape
11 Company Profiles
12 Appendix
Companies Mentioned
- Aethercomm
- Ampleon
- Coherent Corp. (now II-VI Incorporated)
- Efficient Power Conversion Corporation, Inc.
- Epistar Corporation
- GaN Systems
- Integra Technologies Inc.
- Microsemi Corporation
- Mitsubishi Electric Corporation
- Mercury Systems, Inc.
- RFHIC Corporation
- Texas Instruments Incorporated
- Toshiba Corporation
- Transphorm Inc.
For more information about this report visit https://www.researchandmarkets.com/r/fjajpt
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